Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

Albert, Steven, Bengoechea Encabo, Ana, Ledig, Johannes, Schimpke, Tilman, Sánchez García, Miguel Ángel ORCID: https://orcid.org/0000-0002-1494-9351, Strassburg, Martin, Waag, Andreas and Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982 (2015). Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars. "Crystal Growth & Design", v. 15 (n. 8); pp. 3661-3665. ISSN 1528-7483. https://doi.org/10.1021/acs.cgd.5b00235.

Description

Title: Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars
Author/s:
  • Albert, Steven
  • Bengoechea Encabo, Ana
  • Ledig, Johannes
  • Schimpke, Tilman
  • Sánchez García, Miguel Ángel https://orcid.org/0000-0002-1494-9351
  • Strassburg, Martin
  • Waag, Andreas
  • Calleja Pardo, Enrique https://orcid.org/0000-0002-3686-8982
Item Type: Article
Título de Revista/Publicación: Crystal Growth & Design
Date: 2015
ISSN: 1528-7483
Volume: 15
Subjects:
Faculty: Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.

Funding Projects

Type
Code
Acronym
Leader
Title
FP7
280694-2
GECCO
Unspecified
3D GaN for High Efficiency Solid State Lighting
Madrid Regional Government
P2009/ESP-1503
Unspecified
Unspecified
Nanodispositivos eficientes de luz clásica y cuántica (Q&CLight)
Government of Spain
MAT2011-26703
Unspecified
Unspecified
Células solares de InGaN mejoradas con plasmones superficiales y fabricadas por MBE sobre sustratos de silicio y capas de GaN

More information

Item ID: 40858
DC Identifier: https://oa.upm.es/40858/
OAI Identifier: oai:oa.upm.es:40858
DOI: 10.1021/acs.cgd.5b00235
Official URL: http://pubs.acs.org/doi/abs/10.1021/acs.cgd.5b0023...
Deposited by: Memoria Investigacion
Deposited on: 06 Sep 2016 16:53
Last Modified: 30 Nov 2022 09:00
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