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Albert, Steven and Bengoechea Encabo, Ana and Ledig, Johannes and Schimpke, Tilman and Sánchez García, Miguel Ángel and Strassburg, Martin and Waag, Andreas and Calleja Pardo, Enrique (2015). Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars. "Crystal Growth & Design", v. 15 (n. 8); pp. 3661-3665. ISSN 1528-7483. https://doi.org/10.1021/acs.cgd.5b00235.
Title: | Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Crystal Growth & Design |
Date: | 2015 |
ISSN: | 1528-7483 |
Volume: | 15 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.
Item ID: | 40858 |
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DC Identifier: | https://oa.upm.es/40858/ |
OAI Identifier: | oai:oa.upm.es:40858 |
DOI: | 10.1021/acs.cgd.5b00235 |
Official URL: | http://pubs.acs.org/doi/abs/10.1021/acs.cgd.5b0023... |
Deposited by: | Memoria Investigacion |
Deposited on: | 06 Sep 2016 16:53 |
Last Modified: | 30 Nov 2022 09:00 |