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Albert, Steven, Bengoechea Encabo, Ana, Ledig, Johannes, Schimpke, Tilman, Sánchez García, Miguel Ángel ORCID: https://orcid.org/0000-0002-1494-9351, Strassburg, Martin, Waag, Andreas and Calleja Pardo, Enrique
ORCID: https://orcid.org/0000-0002-3686-8982
(2015).
Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars.
"Crystal Growth & Design", v. 15
(n. 8);
pp. 3661-3665.
ISSN 1528-7483.
https://doi.org/10.1021/acs.cgd.5b00235.
Title: | Demonstration of (In, Ga)N/GaN Core-Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Crystal Growth & Design |
Date: | 2015 |
ISSN: | 1528-7483 |
Volume: | 15 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.
Item ID: | 40858 |
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DC Identifier: | https://oa.upm.es/40858/ |
OAI Identifier: | oai:oa.upm.es:40858 |
DOI: | 10.1021/acs.cgd.5b00235 |
Official URL: | http://pubs.acs.org/doi/abs/10.1021/acs.cgd.5b0023... |
Deposited by: | Memoria Investigacion |
Deposited on: | 06 Sep 2016 16:53 |
Last Modified: | 30 Nov 2022 09:00 |