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Albert, Steven, Bengoechea Encabo, Ana, Kong, Xiang, Sánchez García, Miguel Ángel ORCID: https://orcid.org/0000-0002-1494-9351, Trampert, Achim and Calleja Pardo, Enrique
ORCID: https://orcid.org/0000-0002-3686-8982
(2015).
Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy.
"Crystal Growth & Design", v. 15
(n. 6);
pp. 2661-2666.
ISSN 1528-7483.
https://doi.org/10.1021/cg501798j.
Title: | Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Crystal Growth & Design |
Date: | 2015 |
ISSN: | 1528-7483 |
Volume: | 15 |
Subjects: | |
Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
Department: | Otro |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios.
Item ID: | 40859 |
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DC Identifier: | https://oa.upm.es/40859/ |
OAI Identifier: | oai:oa.upm.es:40859 |
DOI: | 10.1021/cg501798j |
Official URL: | http://pubs.acs.org/doi/abs/10.1021/cg501798j |
Deposited by: | Memoria Investigacion |
Deposited on: | 06 Sep 2016 17:07 |
Last Modified: | 30 Nov 2022 09:00 |