Quadruple-junction inverted metamorphic concentrator devices

France, Ryan M. and Geisz, John F. and García Vara, Iván and Steiner, Myles A. and McMahon, William E. and Friedman, Daniel J. and Moriarty, Tom E. and Osterwald, Carl R. and Ward, J. Scott and Duda, Anna and Young, Michelle and Olavarria, Waldo J. (2015). Quadruple-junction inverted metamorphic concentrator devices. "IEEE Journal of Photovoltaics", v. 5 (n. 1); pp. 432-437. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2014.2364132.


Title: Quadruple-junction inverted metamorphic concentrator devices
  • France, Ryan M.
  • Geisz, John F.
  • García Vara, Iván
  • Steiner, Myles A.
  • McMahon, William E.
  • Friedman, Daniel J.
  • Moriarty, Tom E.
  • Osterwald, Carl R.
  • Ward, J. Scott
  • Duda, Anna
  • Young, Michelle
  • Olavarria, Waldo J.
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Photovoltaics
Date: 2015
ISSN: 2156-3381
Volume: 5
Freetext Keywords: Metamorphic, multijunction, III–V
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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We present results for quadruple-junction inverted metamorphic (4J-IMM) devices under the concentrated direct spectrum and analyze the present limitations to performance. The devices integrate lattice-matched subcells with rear heterojunctions, as well as lattice-mismatched subcells with low threading dislocation density. To interconnect the subcells, thermally stable lattice-matched tunnel junctions are used, as well as a metamorphic GaAsSb/GaInAs tunnel junction between the lattice-mismatched subcells. A broadband antireflection coating is used, as well as a front metal grid designed for high concentration operation. The best device has a peak efficiency of (43.8 &#x00B1; 2.2)% at 327-sun concentration, as measured with a spectrally adjustable flash simulator, and maintains an efficiency of (42.9 &#x00B1; 2.1)% at 869 suns, which is the highest concentration measured. The V<sub>oc</sub> increases from 3.445 V at 1-sun to 4.10 V at 327-sun concentration, which indicates high material quality in all of the subcells. The subcell voltages are analyzed using optical modeling, and the present device limitations and pathways to improvement are discussed. Although further improvements are possible, the 4J-IMM structure is clearly capable of very high efficiency at concentration, despite the complications arising from utilizing lattice-mismatched subcells.

Funding Projects

FP7299878METACELLSUNIVERSIDAD POLITECNICA DE MADRIDAdvanced epitaxy of metamorphic semiconductor structures for multijunction solar cells

More information

Item ID: 40903
DC Identifier: https://oa.upm.es/40903/
OAI Identifier: oai:oa.upm.es:40903
DOI: 10.1109/JPHOTOV.2014.2364132
Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6945794
Deposited by: Memoria Investigacion
Deposited on: 14 Jun 2016 16:11
Last Modified: 14 Jun 2016 16:11
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