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The influence of Ga composition of GaInAsN QDs on N incorporation.
Citation
Gargallo Caballero, Raquel, Fernández González, Álvaro de Guzmán, Ulloa Herrero, José María, Hopkinson, M. and Muñoz Merino, Elias (2009). The influence of Ga composition of GaInAsN QDs on N incorporation.. In: "7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces", 21/04/2008-24/04/2008, Marsella, Francia. ISBN ISSN 1369-8001.
Description
| Title: | The influence of Ga composition of GaInAsN QDs on N incorporation. |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces |
| Event Dates: | 21/04/2008-24/04/2008 |
| Event Location: | Marsella, Francia |
| Title of Book: | Materials science in semiconductor processing. Proceedings of 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces |
| Date: | 2009 |
| ISBN: | ISSN 1369-8001 |
| Volume: | 12, Is |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Currently, dilute nitride III-N-As semiconductors, such as InGaAsN/GaAs quantum well material system, allow to develop very competitive lasers at long wavelength emission (1.3 µm). However, longer wavelengths, such as 1.55 µm, are very difficult to achieve without making worse the performance of the device. Alternatively, as it is well known, great efforts are being devoted to the study of dilute nitride III-N-As quantum dots (QDs) semiconductor [1]. Mainly, this is due to the attractive advantages that they show over other materials and structures: the strong reduction in the bandgap of the III-As semiconductor by adding even a few percent of nitrogen into them, and the interesting physical properties that the QDs offer to laser characteristics (e.g. low threshold current, etc)
More information
| Item ID: | 4102 |
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| DC Identifier: | https://oa.upm.es/4102/ |
| OAI Identifier: | oai:oa.upm.es:4102 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 28 Mar 2011 10:10 |
| Last Modified: | 28 Mar 2023 16:19 |
