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GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
Citation
Utrilla Lomas, Antonio David, Ulloa Herrero, José María 
ORCID: https://orcid.org/0000-0002-5679-372X, Gacevic, Zarko ORCID: https://orcid.org/0000-0003-0552-2169, Reyes, D.F., González, D., Ben, T., Fernández González, Álvaro de Guzmán ORCID: https://orcid.org/0000-0001-5386-0360 and Hierro Cano, Adrián ORCID: https://orcid.org/0000-0002-0414-4920
(2015).
GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency.
In: "18th European Molecular Beam Epitaxy (EUROMBE 2015)", 15/03/2015 - 18/03/2015, Canazei, Italy. pp..
Description
| Title: | GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 18th European Molecular Beam Epitaxy (EUROMBE 2015) |
| Event Dates: | 15/03/2015 - 18/03/2015 |
| Event Location: | Canazei, Italy |
| Title of Book: | 18th European Molecular Beam Epitaxy (EUROMBE 2015) |
| Date: | 2015 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Recently, quantum dots (QDs) have been drawing an increasing interest as an alternative approach to enhance solar cell efficiency. Multiple-exciton generation in zero-dimensional structures, the possibility to implement intermediate-band solar cells , or the introduction of sub-band-gap states are some of the benefits from using QDs. Indeed, the use of InAs QDs has been demonstrated to extend the photoresponse of bulk GaAs and higher short-circuit currents have already been obtained. The use of a modified capping layer (CL), particularly GaAs(Sb)(N), is expected to further extend the photoresponse from InAs QDs, allowing besides that an independent control of the hole and electron confinement and therefore of their respective escape times.
More information
| Item ID: | 41987 |
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| DC Identifier: | https://oa.upm.es/41987/ |
| OAI Identifier: | oai:oa.upm.es:41987 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 03 Sep 2016 10:19 |
| Last Modified: | 28 Mar 2023 05:57 |
