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Barrutia Poncela, Laura and Barrigón Montañés, Enrique and López Conesa, L. and Rebled, J. and Estradé, S. and Peiró, F. and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos (2015). On the use ofSb to improve the performance of GaInP subcells of multijunction solar cells. In: "42nd Photovoltaic Specialist Conference (PVSC 2015)", 14/06/2015 - 19/06/2015, New Orleans, LA, EE.UU. pp. 1-4. https://doi.org/10.1109/PVSC.2015.7356354.
Title: | On the use ofSb to improve the performance of GaInP subcells of multijunction solar cells |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | 42nd Photovoltaic Specialist Conference (PVSC 2015) |
Event Dates: | 14/06/2015 - 19/06/2015 |
Event Location: | New Orleans, LA, EE.UU |
Title of Book: | 42nd Photovoltaic Specialist Conference (PVSC 2015) |
Date: | 2015 |
Subjects: | |
Freetext Keywords: | GaInP, Sb, surfactant, External Quantum Efficiency |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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GaInP is a material commonly employed for the top subcells of different multijunction solar cells architectures. In this study, the performance of GaInP top cells has been improved by increasing the energy band gap with the use of Sb as a surfactant during the MOVPE growth of the structures. The optimization of the appropriate Sb molar flow was done by Reflectance Anisotropy Spectroscopy. Different characterization techniques have been employed to assess the effect of Sb on the morphology, microstructure and optoelectronic properties of the resulting GaInP grown with different Sb/P ratios. Finally, the performance of several GaInP subcells with different order parameters has been assessed.
Item ID: | 42021 |
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DC Identifier: | https://oa.upm.es/42021/ |
OAI Identifier: | oai:oa.upm.es:42021 |
DOI: | 10.1109/PVSC.2015.7356354 |
Deposited by: | Memoria Investigacion |
Deposited on: | 27 Jul 2016 17:05 |
Last Modified: | 30 Nov 2022 09:00 |