Optimum single-gap solar cells for missions to Mercury

Abstract

The power supply for space probes is usually based on photovoltaic (PV) systems. The first solar cells used in these systems were single-gap solar cells fabricated with Si and GaAs. Later on, multijunction solar cells (MJSC) based on III–V semiconductors
were developed because of their higher efficiency and tolerance to a radiation environment [1]. All these solar cells have been based on semiconductors that fulfill the needs of most near-Earth missions. However, those same semiconductors fail to meet the needs of some other missions involving harsh environments such as high-intensity high-temperature (HIHT) environments [2]. In this work, we investigate which semiconductor material is optimum to implement single-gap solar cells for missions to Mercury, where HIHT conditions are expected.
Because solar cell efficiency decreases as temperature increases [3], achieving high-efficiency photovoltaic conversion at HIHT conditions is a big challenge. Previous works have pointed out the need of using wide-bandgap semiconductors to reach this goal [4,5]. In this context, we will study the potential of solar cells based on AlxGa1−xAs, a well-known semiconductor whose physical properties have been extensively investigated. The limiting efficiency of these solar cells performing in near-Mercury missions will be calculated to determine the optimum composition for AlxGa1−xAs.