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2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures
Citation
Berney Needleman, David, Wagner, Hannes, Altermatt, Pietro P., Cañizo Nadal, Carlos del 
ORCID: https://orcid.org/0000-0003-1287-6854 and Buonassisi, Tonio
(2015).
2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures.
In: "25th Workshop on Crystalline Silicon Solar Cells Materials and Processes", 26/07/2015 - 29/07/2015, Keystone, Colorado, EE.UU. p. 1.
Description
| Title: | 2-D and 3-D TCAD simulations of defect-tolerant solar cell architectures |
|---|---|
| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Poster) |
| Event Title: | 25th Workshop on Crystalline Silicon Solar Cells Materials and Processes |
| Event Dates: | 26/07/2015 - 29/07/2015 |
| Event Location: | Keystone, Colorado, EE.UU |
| Title of Book: | 25th Workshop on Crystalline Silicon Solar Cells Materials and Processes |
| Date: | 2015 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We use 2-D and 3-D TCAD simulations in Sentaurus Device to determine the injection-dependent device performance impacts of point defects (e.g., Fei) and extended defects (e.g., grain boundaries). We identify features of device design that contribute to defect tolerance.
More information
| Item ID: | 43680 |
|---|---|
| DC Identifier: | https://oa.upm.es/43680/ |
| OAI Identifier: | oai:oa.upm.es:43680 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 24 Oct 2016 19:26 |
| Last Modified: | 24 Oct 2016 19:26 |
