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Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers
Citation
Morana, B. and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Rodríguez Rodríguez, Tomás and Martínez de Quel Pérez, Óscar and Jiménez Leube, Francisco Javier and Kling, Andreas (2008). Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers. In: "Spring Meeting 2008, Materials Research Society", 24/03/2008-28/03/2008, San Francisco, California, EEUU.
Description
| Title: | Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | Spring Meeting 2008, Materials Research Society |
| Event Dates: | 24/03/2008-28/03/2008 |
| Event Location: | San Francisco, California, EEUU |
| Title of Book: | Amorphous and Polycristalline Silicon Science and Technology 2008 |
| Date: | 2008 |
| Volume: | 1066 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Tecnología Electrónica [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing temperature.
More information
| Item ID: | 4402 |
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| DC Identifier: | https://oa.upm.es/4402/ |
| OAI Identifier: | oai:oa.upm.es:4402 |
| Official URL: | http://www.mrs.org/s_mrs/sec.asp?CID=13907&DID=209... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 28 Sep 2010 10:22 |
| Last Modified: | 20 Apr 2016 13:38 |
