Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers

Morana, B. and Rodríguez Domínguez, Andrés and Sangrador García, Jesús and Rodríguez Rodríguez, Tomás and Martínez de Quel Pérez, Óscar and Jiménez Leube, Francisco Javier and Kling, Andreas (2008). Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers. In: "Spring Meeting 2008, Materials Research Society", 24/03/2008-28/03/2008, San Francisco, California, EEUU.

Description

Title: Nanostructures with Group IV nanocrystals obtained by LPCVD and thermal annealing of SiGeO layers
Author/s:
  • Morana, B.
  • Rodríguez Domínguez, Andrés
  • Sangrador García, Jesús
  • Rodríguez Rodríguez, Tomás
  • Martínez de Quel Pérez, Óscar
  • Jiménez Leube, Francisco Javier
  • Kling, Andreas
Item Type: Presentation at Congress or Conference (Article)
Event Title: Spring Meeting 2008, Materials Research Society
Event Dates: 24/03/2008-28/03/2008
Event Location: San Francisco, California, EEUU
Title of Book: Amorphous and Polycristalline Silicon Science and Technology 2008
Date: 2008
Volume: 1066
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Electrónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing temperature.

More information

Item ID: 4402
DC Identifier: https://oa.upm.es/4402/
OAI Identifier: oai:oa.upm.es:4402
Official URL: http://www.mrs.org/s_mrs/sec.asp?CID=13907&DID=209...
Deposited by: Memoria Investigacion
Deposited on: 28 Sep 2010 10:22
Last Modified: 20 Apr 2016 13:38
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