Crystallographically uniform arrays of ordered (In)GaN Nanocolumns

Gacevic, Zarko and Bengoechea Encabo, Ana and Albert, Steven and Torres Pardo, Almudena and González Calbet, José María and Calleja Pardo, Enrique (2015). Crystallographically uniform arrays of ordered (In)GaN Nanocolumns. "Journal of Applied Physics", v. 117 (n. 3); pp.. ISSN 0022-0248.


Title: Crystallographically uniform arrays of ordered (In)GaN Nanocolumns
  • Gacevic, Zarko
  • Bengoechea Encabo, Ana
  • Albert, Steven
  • Torres Pardo, Almudena
  • González Calbet, José María
  • Calleja Pardo, Enrique
Item Type: Article
Título de Revista/Publicación: Journal of Applied Physics
Date: 2015
ISSN: 0022-0248
Volume: 117
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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In this work, through a comparative study of self-assembled (SA) and selective area grown (SAG) (In)GaN nanocolumn (NC) ensembles, we first give a detailed insight into improved crystallographic uniformity (homogeneity of crystallographic tilts and twists) of the latter ones. The study, performed making use of: reflective high energy electron diffraction, X-ray diffraction and scanning electron microscopy, reveals that unlike their SA counterparts, the ensembles of SAG NCs show single epitaxial relationship to both sapphire(0001) and Si(111) underlying substrates. In the second part of the article, making use of X-ray diffraction, we directly show that the selective area growth leads to improved compositional uniformity of InGaN NC ensembles. This further leads to improved spectral purity of their luminescence, as confirmed by comparative macro-photoluminescence measurements performed on SA and SAG InGaN NC ensembles. An improved crystallographic uniformity of NC ensembles facilitates their integration into optoelectronic devices, whereas their improved compositional uniformity allows for their employment in single-color optoelectronic applications.

Funding Projects

FP7280694-2GECCOUnspecified3D GaN for High Efficiency Solid State Lighting
Madrid Regional GovernmentP2009/ESP-1503UnspecifiedUnspecifiedNanodispositivos eficientes de luz clásica y cuántica (Q&CLight)
Government of SpainMAT2011-26703UnspecifiedUnspecifiedCélulas solares de InGaN mejoradas con plasmones superficiales y fabricadas por MBE sobre sustratos de Silicio y capas de GaN

More information

Item ID: 44466
DC Identifier:
OAI Identifier:
DOI: 10.1063/1.4905951
Official URL:
Deposited by: Memoria Investigacion
Deposited on: 23 Jan 2017 16:13
Last Modified: 10 Jun 2019 13:24
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