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Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells
Citation
Ramiro Gonzalez, Iñigo, Antolín Fernández, Elisa, Hwang, J., Teran, A., Martin, A.J., García-Linares Fontes, Pablo, Millunchick, J., Phillips, J., Martí Vega, Antonio and Luque López, Antonio (2016). Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells. "IEEE Journal of Photovoltaics", v. PP (n. 99); pp. 1-5. ISSN 2156-3381. https://doi.org/10.1109/JPHOTOV.2016.2637658.
Description
| Title: | Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells |
|---|---|
| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | IEEE Journal of Photovoltaics |
| Date: | December 2016 |
| ISSN: | 2156-3381 |
| Volume: | PP |
| Subjects: | |
| Freetext Keywords: | Absorption, Energy measurement, Gallium arsenide, Photovoltaic cells, Quantum dots, Silicon carbide, Temperature measurement, Characterization of PV, Intermediate band solar cells, quantum dots |
| Faculty: | Instituto de Energía Solar (IES) (UPM) |
| Department: | Electrónica Física |
| UPM's Research Group: | Silicio y Nuevos Conceptos para Células Solares |
| Creative Commons Licenses: | None |
Abstract
In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs) by means of quantum efficiency (QE) measurements. We are able, for the first time, to measure an absolute QE which clearly reveals the three characteristic bandgaps of an IBSC; EG, EH, and EL, for which we found the values 1.52, 1.02, and 0.49 eV, respectively, at 9 K. Under monochromatic illumination, QE at the energies EH and EL is 10–4 and 10–8, respectively. These low values are explained by the lack of efficient mechanisms of completing the second sub-bandgap transition when only monochromatic illumination is used. The addition of a secondary light source (E = 1.32 eV) during the measurements produces an increase in the measured QE at EL of almost three orders of magnitude.
Funding Projects
Type
Code
Acronym
Leader
Title
Madrid Regional Government
S2013/MAE-2780
MADRID-PV
Antonio Martí Vega
Materiales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica
Government of Spain
TEC2015-64189-C3-1-R
INVENTA-PV
Antonio Martí Vega
Unspecified
More information
| Item ID: | 44703 |
|---|---|
| DC Identifier: | https://oa.upm.es/44703/ |
| OAI Identifier: | oai:oa.upm.es:44703 |
| DOI: | 10.1109/JPHOTOV.2016.2637658 |
| Official URL: | http://ieeexplore.ieee.org/document/7797626/?reloa... |
| Deposited by: | Prof. Antonio Martí Vega |
| Deposited on: | 16 Feb 2017 12:11 |
| Last Modified: | 30 Nov 2022 09:00 |
