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Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology
Citation
Kalyuzhnyy, Nikolay A., Mintairov, Sergey A., Salii, Roman A., Nadtochiy, Alexey M., Payusov, Alexey S., Brunkov, Pavel M., Nevedomsky, Vladimir N., Shvarts, Maxim Z., Martí Vega, Antonio 
ORCID: https://orcid.org/0000-0002-8841-7091, Andreev, Viacheslav M. and Luque López, Antonio ORCID: https://orcid.org/0000-0002-8357-6413
(2016).
Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology.
"Progress in Photovoltaics", v. 24
(n. 9);
pp. 1261-1271.
ISSN 1062-7995.
https://doi.org/10.1002/pip.2789.
Description
| Title: | Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain-balance technology |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Progress in Photovoltaics |
| Date: | 14 June 2016 |
| ISSN: | 1062-7995 |
| Volume: | 24 |
| Subjects: | |
| Freetext Keywords: | MOVPE; solar cells; quantum dots; InAs/GaAs; QD array; photoluminescence; photocurrent |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique ispresented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The bestconditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among awide range of possibilities. Solar cells with an excellent quantum ef?ciency have been obtained, with a sub-bandgapphoto-response of 0.07 mA/cm2per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potentialof this technology to be able to increase the ef?ciency of lattice-matched multi-junction solar cells and contributing to abetter understanding of QD technology toward the achievement of practical intermediate-band solar cells.
Funding Projects
Type
Code
Acronym
Leader
Title
Government of Spain
ENE2012-37804-C02-01
Unspecified
Unspecified
Aplicación de estructuras cuánticas y otros nuevos conceptos a la mejora de la eficiencia de las células solares
More information
| Item ID: | 45996 |
|---|---|
| DC Identifier: | https://oa.upm.es/45996/ |
| OAI Identifier: | oai:oa.upm.es:45996 |
| DOI: | 10.1002/pip.2789 |
| Official URL: | http://onlinelibrary.wiley.com/doi/10.1002/pip.278... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 24 May 2017 16:16 |
| Last Modified: | 20 Mar 2019 16:54 |
