Full text
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (9MB) | Preview |
Utrilla Lomas, Antonio David, Reyes, D.F., Llorens Molina, Juan Antonio, Artacho Huertas, Irene ORCID: https://orcid.org/0000-0003-0213-2966, Ben, T., González Lamuño, D., Gacevic, Zarko
ORCID: https://orcid.org/0000-0003-0552-2169, Kurtz de Griñó, Alejandro, Guzmán, Luis Alberto, Hierro Cano, Adrián
ORCID: https://orcid.org/0000-0002-0414-4920 and Ulloa Herrero, José María
ORCID: https://orcid.org/0000-0002-5679-372X
(2016).
Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells.
"Solar Energy Materials and Solar Cells", v. 159
;
pp. 282-289.
ISSN 0927-0248.
https://doi.org/10.1016/j.solmat.2016.09.006.
Title: | Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells |
---|---|
Author/s: |
|
Item Type: | Article |
Título de Revista/Publicación: | Solar Energy Materials and Solar Cells |
Date: | January 2016 |
ISSN: | 0927-0248 |
Volume: | 159 |
Subjects: | |
Freetext Keywords: | Solar cells; Quantum dots; GaAsSb; Capping layers; Type-II; Carrier collection efficiency |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (9MB) | Preview |
This work reports on the benefits from using thin GaAsSb capping layers (CLs) on InAs/GaAs quantum dot (QD) solar cells. The application of such CLs allows the tunability of the QD ground state, switching the QD-CL band alignment from type I to type II for high Sb contents and extending the photoresponse beyond 1.5 µm. Two different structures with ~10% and ~20% Sb contents in the CL (type-I and type-II band alignments, respectively) are explored, leading to efficiency improvements over a reference InAs/GaAs QD solar cell of 20% and 10%, respectively. In general, a significant increase in short-circuit current density (Jsc) is observed, partially due to the extended photocurrent spectrum and the additional contribution of the CL itself. Particularly, for a moderate Sb content, an improved carrier collection efficiency is also found to be a main reason for the Jsc increase. Calculations from an 8×8 k·p method suggest the attribution of such an improvement to longer carrier lifetimes in the wetting layer-CL structure due to the transition to a type-II band alignment. Open-circuit voltages (Voc) exceeding that of a reference QD solar cell are demonstrated under light concentration using GaAsSb CLs, which proves that the Voc is not limited by the low bandgap CLs. Moreover, the highest value is obtained for the high Sb content type-II structure, despite the higher accumulation of strain and the lower effective bandgap. Indeed, the faster Voc increase with light power found in the latter case leads to an Voc even larger than the effective bandgap.
Item ID: | 46040 |
---|---|
DC Identifier: | https://oa.upm.es/46040/ |
OAI Identifier: | oai:oa.upm.es:46040 |
DOI: | 10.1016/j.solmat.2016.09.006 |
Official URL: | http://www.sciencedirect.com/science/article/pii/S... |
Deposited by: | Memoria Investigacion |
Deposited on: | 24 May 2017 15:38 |
Last Modified: | 30 Nov 2022 09:00 |