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Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes
Citation
Aseev, Pavel, Gacevic, Zarko 
ORCID: https://orcid.org/0000-0003-0552-2169, Calleja Pardo, Enrique ORCID: https://orcid.org/0000-0002-3686-8982, Seger, Brian, Vesborg, Peter C. K. and Chorkendorff, Ib
(2016).
Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes.
In: "21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21)", 25/07/2016 - 29/07/2016, St. Petersburg, Russia. p. 161.
Description
| Title: | Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Poster) |
| Event Title: | 21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21) |
| Event Dates: | 25/07/2016 - 29/07/2016 |
| Event Location: | St. Petersburg, Russia |
| Title of Book: | 21st International Conference on Photochemical Conversion and Storage of Solar Energy (IPS-21) |
| Date: | 2016 |
| Subjects: | |
| Faculty: | Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) (UPM) |
| Department: | Otro |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Recently InxGa1-xN (x=0-1) thin films and nanostructures have attracted considerable interest in the field of solar assisted water splitting. As a standalone photoelectrode it is very appealing due to its direct, tunable bandgap covering nearly the entire solar spectrum (Fig. 1a), high absorption coefficient and mobility, along with near-perfect band-edge potentials. Moreover, because of the special bands alignment it can be grown on p-Si photocathode and exhibit vertical conductivity without complex tunnel junction. These facts open a possibility to achieve high efficiency, relatively cheap InGaN/Si-based two-photon tandem devices for water splitting-
More information
| Item ID: | 46173 |
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| DC Identifier: | https://oa.upm.es/46173/ |
| OAI Identifier: | oai:oa.upm.es:46173 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 12 Sep 2017 16:52 |
| Last Modified: | 11 Jan 2023 09:15 |
