Citation
Patiño Gómez, Moisés and Ortega González, Francisco Javier and Nicolás García, Miguel and Tena Ramos, David and Pardo Martín, José Manuel
(2016).
Amplificador de Potencia de Alto Rendimiento Clase E en Banda S.
In: "XXXI Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2016", 05/09/2016 - 07/09/2016, Madrid. pp. 1-4.
Abstract
High-efficiency power amplification techniques are currently a well-known research field. A S-band suboptimum Class-E power amplifier based on a unmatched packaged GaN HEMT has been designed and built in this work. The load network of this amplifier is made of microstrip transmission lines and it is based on the double-reactance compensation principle. This kind of switchmode RF power amplifiers can be a solution for high-efficiency microwave amplification when
nominal Class-E is not possible. The implemented prototype
operates from 2.1 GHz to 2.6 GHz showing 79% peak drain
efficiency with 14 W peak output power and 13.6 dB power gain at 2.4 GHz. This amplifier is expected to be used in satellite communications working as RF power stage in a Envelope Elimination and Restoration (EER) transmitter, or in the Industrial, Scientific and Medical (ISM) band for wireless power transfer applications.
