A substrate removal processing method for III-V solar cells compatible with low-temperature characterization

Villa Morales, Juan and Ramiro Gonzalez, Iñigo and Ripalda Cobián, Jose María and Antolín Fernández, Elisa and Garcia, I. and Martí Vega, Antonio (2017). A substrate removal processing method for III-V solar cells compatible with low-temperature characterization. "Materials science in semiconductor processing", v. 63 ; pp. 58-63. ISSN 1369-8001. https://doi.org/10.1016/j.mssp.2017.02.003.

Description

Title: A substrate removal processing method for III-V solar cells compatible with low-temperature characterization
Author/s:
  • Villa Morales, Juan
  • Ramiro Gonzalez, Iñigo
  • Ripalda Cobián, Jose María
  • Antolín Fernández, Elisa
  • Garcia, I.
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: Materials science in semiconductor processing
Date: 1 June 2017
ISSN: 1369-8001
Volume: 63
Subjects:
Freetext Keywords: Thin film; Substrate removal; Low temperature; Concentrator solar cells; III–V semiconductors
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

In this work, we present a substrate removal procedure for solar cells compatible with direct attachment of the epitaxy to a holder through a thermally and electrically conductive interface. In our case this procedure was motivated by the need to develop a processing technique compatible with low-temperature characterization of the devices. The method is based on the use of indium to bond a thin-film epitaxial structure to a silicon support. The adequate properties of indium, namely, low tensile strength and good thermal and electrical conductivity, allow characterizing the devices at very low temperatures without causing strain-induced degradation in the samples. Following this method, we have fabricated and characterized thin-film (1.74 µm) AlGaAs solar cells with and without a layer of InAs quantum dots. We show the adequacy of our method to measure at low temperatures by means of measuring the photocurrent or quantum efficiency of the devices at different temperatures, ranging from 300 K to 20 K.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainBES-2013–066463UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentGrant S2013/MAE-2780Project MADRID-PVUnspecifiedUnspecified
Government of SpainGrant TEC2015-64189-C3-1-RINVENTA-PVUnspecifiedUnspecified
Government of SpainGrant RTC-2015–3469-3POWERLEOUnspecifiedUnspecified

More information

Item ID: 50074
DC Identifier: https://oa.upm.es/50074/
OAI Identifier: oai:oa.upm.es:50074
DOI: 10.1016/j.mssp.2017.02.003
Official URL: https://www.sciencedirect.com/science/article/pii/S1369800117303256?via%3Dihub
Deposited by: Memoria Investigacion
Deposited on: 23 May 2021 08:07
Last Modified: 23 May 2021 08:07
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