Interpretation of photovoltaic performance of n-ZnO:Al/ZnS:Cr/p-GaP solar cell

Nematollahi, Mohammadreza and López Estrada, Esther and Ramiro González, Íñigo and García-Linares Fontes, Pablo and Antolín Fernández, Elisa and Artacho Huertas, Irene and Tablero Crespo, César and Karhu, Eric and Reenaas, Turid W. and Martí Vega, Antonio (2017). Interpretation of photovoltaic performance of n-ZnO:Al/ZnS:Cr/p-GaP solar cell. "Solar Energy Materials and Solar Cells", v. 169 ; pp. 56-60. ISSN 0927-0248. https://doi.org/10.1016/j.solmat.2017.05.003.

Description

Title: Interpretation of photovoltaic performance of n-ZnO:Al/ZnS:Cr/p-GaP solar cell
Author/s:
  • Nematollahi, Mohammadreza
  • López Estrada, Esther
  • Ramiro González, Íñigo
  • García-Linares Fontes, Pablo
  • Antolín Fernández, Elisa
  • Artacho Huertas, Irene
  • Tablero Crespo, César
  • Karhu, Eric
  • Reenaas, Turid W.
  • Martí Vega, Antonio
Item Type: Article
Título de Revista/Publicación: Solar Energy Materials and Solar Cells
Date: September 2017
ISSN: 0927-0248
Volume: 169
Subjects:
Freetext Keywords: Deep-level intermediate band solar cell; Transition-metal-doped semiconductor; Cr-doped ZnS; Thermal carrier escape
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

We investigate Cr-doped ZnS (ZnS: Cr) as a potential deep-level intermediate band material for high efficiency solar cells. We study n-ZnO:Al/ZnS:Cr/p-GaP heterojunction cell for the first time, and this paper presents an interpretation of the performance of the solar cell in the framework of intermediate band solar cells. We conclude that the ZnS:Cr used in this work has two characteristic energy levels at 0.88 eV and 2.68 eV below the conduction band. This material also has a quasi-continuum of energy levels between the former level and the valence band maximum. This quasi-continuum results in thermal carrier escape that limits the open-circuit voltage to the lowest energy gap in ZnS: Cr, ≃0.8 V.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedUnspecified

More information

Item ID: 50075
DC Identifier: https://oa.upm.es/50075/
OAI Identifier: oai:oa.upm.es:50075
DOI: 10.1016/j.solmat.2017.05.003
Official URL: https://www.sciencedirect.com/science/article/pii/S0927024817302209?via%3Dihub
Deposited by: Memoria Investigacion
Deposited on: 23 May 2021 08:32
Last Modified: 23 May 2021 08:32
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