Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures

Svatek, Simon A. and Antolín Fernández, Elisa and Lin, Der-Yuh and Frisenda, Riccardo and Reuter, Christoph and Molina Mendoza, Aday J. and Muñoz Sánchez, Manuel and Agrait, Nicolas and Ko, Tsung-Shine and Pérez de Lara, David and Castellanos Gómez, Andres (2017). Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures. "Journal of Materials Chemistry C", v. 5 (n. 4); pp. 854-861. ISSN 2050-7526.


Title: Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures
  • Svatek, Simon A.
  • Antolín Fernández, Elisa
  • Lin, Der-Yuh
  • Frisenda, Riccardo
  • Reuter, Christoph
  • Molina Mendoza, Aday J.
  • Muñoz Sánchez, Manuel
  • Agrait, Nicolas
  • Ko, Tsung-Shine
  • Pérez de Lara, David
  • Castellanos Gómez, Andres
Item Type: Article
Título de Revista/Publicación: Journal of Materials Chemistry C
Date: 2017
ISSN: 2050-7526
Volume: 5
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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p–n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light–matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.

Funding Projects

FP7606728ITN MOLESCOUnspecifiedUnspecified
Government of SpainBES-2012-057346UnspecifiedUnspecifiedUnspecified
Government of SpainFIS2015-67367-C2-1-PUnspecifiedUnspecifiedUnspecified

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Item ID: 50147
DC Identifier:
OAI Identifier:
DOI: 10.1039/c6tc04699a
Official URL:!divAbstract
Deposited by: Memoria Investigacion
Deposited on: 29 May 2021 08:10
Last Modified: 29 May 2021 08:10
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