Full text
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (5MB) | Preview |
Orlando Carrillo, Vincenzo, Gabás, Mercedes, Galiana Blanco, Beatriz, Espinet González, Pilar, Palanco López, Santiago, Nuñez Mendoza, Neftali ORCID: https://orcid.org/0000-0003-2339-2441, Vázquez López, Manuel
ORCID: https://orcid.org/0000-0003-1070-1751, Araki, Kenji and Algora del Valle, Carlos
ORCID: https://orcid.org/0000-0003-1872-7243
(2017).
Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests.
"Progress in Photovoltaics", v. 25
(n. 1);
pp. 97-112.
ISSN 1062-7995.
https://doi.org/10.1002/pip.2818.
Title: | Failure analysis on lattice matched GaInP/Ga(In)As/Ge commercial concentrator solar cells after temperature accelerated life tests |
---|---|
Author/s: |
|
Item Type: | Article |
Título de Revista/Publicación: | Progress in Photovoltaics |
Date: | January 2017 |
ISSN: | 1062-7995 |
Volume: | 25 |
Subjects: | |
Freetext Keywords: | CPV; failure analysis; reliability; accelerated life test; characterization |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (5MB) | Preview |
Accelerated life tests are frequently used to provide reliability information in a moderate period of time (weeks or months), and after that, a failure analysis is compulsory to detect the failure origins. In this paper, a failure analysis has been carried out after a temperature accelerated life test on lattice matched GaInP/Ga(In)As/Ge triple junction commercial solar cells. Solar cells were forward biased in darkness inside three climatic chambers in order to emulate the photo-generated current under nominal working conditions (a concentration level of 820 suns). After the accelerated aging test, a characterization of the resulting cells by means of quantum efficiency, dark and illumination I?V curves, electroluminescence, scanning electron microscope, energy dispersive X-ray, scanning transmission electron microscope and X-ray photoelectron spectroscopy has been carried out. Current is identified as the cause of degradation while temperature just dominates the accelerating factor of the aging test. Current promotes the front metal damage produced by the chemical evolution of the electroplating impurities together with those of the tab soldering process. Semiconductor structure does not seem to be responsible of any failure. Therefore, this kind of lattice matched GaInP/Ga(In)As/Ge triple junction solar cells, that as of 2016, are the workhorse of CPV technology, exhibits as a very robust device if the front metal connection is properly accomplished.
Item ID: | 50356 |
---|---|
DC Identifier: | https://oa.upm.es/50356/ |
OAI Identifier: | oai:oa.upm.es:50356 |
DOI: | 10.1002/pip.2818 |
Official URL: | https://onlinelibrary.wiley.com/doi/abs/10.1002/pi... |
Deposited by: | Memoria Investigacion |
Deposited on: | 17 Sep 2018 16:33 |
Last Modified: | 30 Nov 2022 09:00 |