Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells

Lombardero Hernández, Iván and Ochoa Gómez, Mario and García Vara, Iván and Hinojosa Arner, Manuel and Caño Fernández, Pablo and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Johnson, Andrew and Davies, Iwan and Tan, K.H. and Loke, W.K. and Wicaksono, S. and Yoon, S.F. and Romero Pareja, Rocío and Gabás Pérez, Mercedes (2017). Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells. In: "Spanish Conference on Electron Devices (CDE) 2017", 08/02/2017 - 10/02/2017, Barcelona, España. ISBN 978-1-5090-5073-4. pp. 1-4. https://doi.org/10.1109/CDE.2017.7905216.

Description

Title: Preliminary analysis of annealing impact on 1 eV GaNAsSb solar cells
Author/s:
  • Lombardero Hernández, Iván
  • Ochoa Gómez, Mario
  • García Vara, Iván
  • Hinojosa Arner, Manuel
  • Caño Fernández, Pablo
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Johnson, Andrew
  • Davies, Iwan
  • Tan, K.H.
  • Loke, W.K.
  • Wicaksono, S.
  • Yoon, S.F.
  • Romero Pareja, Rocío
  • Gabás Pérez, Mercedes
Item Type: Presentation at Congress or Conference (Article)
Event Title: Spanish Conference on Electron Devices (CDE) 2017
Event Dates: 08/02/2017 - 10/02/2017
Event Location: Barcelona, España
Title of Book: Proceedings of Spanish Conference on Electron Devices (CDE) 2017
Date: April 2017
ISBN: 978-1-5090-5073-4
Subjects:
Freetext Keywords: annealing; dilute nitride; solar cell
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Impact of annealing temperature, time and process gas on 1 eV GaNAsSb solar cells is assessed. In situ and ex situ annealings are carried out in order to analyze their effect on the solar cell performance. Ex situ annealings on as grown samples using N2 as process gas increase the external quantum efficiency while using H2 as process gas degrades the solar cell performance. Best performance is obtained by in situ annealing in a molecular beam epitaxy reactor. External quantum efficiency increases in the short wavelength range (? 700 nm) and decreases in the long wavelength range (? 700 nm) after ex situ annealing using N2 as process gas on in situ annealed samples (in a molecular beam epitaxy reactor).

Funding Projects

TypeCodeAcronymLeaderTitle
FP7607153LONGESSTUnspecifiedUnspecified
Government of SpainTEC2014-54260-C3-1-PUnspecifiedUnspecifiedUnspecified
Government of SpainPCIN-2015- 181-C02-02UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2014-54260-C3-3-PUnspecifiedUnspecifiedUnspecified
Government of SpainPCIN-2015-181-C02-01UnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentMADRID-PVS2013/MAE-2780UnspecifiedUnspecified

More information

Item ID: 50666
DC Identifier: https://oa.upm.es/50666/
OAI Identifier: oai:oa.upm.es:50666
DOI: 10.1109/CDE.2017.7905216
Official URL: https://ieeexplore.ieee.org/abstract/document/7905216
Deposited by: Memoria Investigacion
Deposited on: 30 May 2021 08:04
Last Modified: 30 May 2021 08:04
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