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Sierra Zapata, M., Clement Lorenzo, Marta ORCID: https://orcid.org/0000-0003-4956-8206, Mirea, Teona
ORCID: https://orcid.org/0000-0003-2324-4895, Olivares Roza, Jimena
ORCID: https://orcid.org/0000-0003-4396-4363 and Iborra Grau, Enrique
ORCID: https://orcid.org/0000-0002-1385-1379
(2017).
Substrate texturing for homogeneous deposition of tilted c-axis AlN films for shear mode operation.
In: "Proceedings of the 2017 Joint Conference of the European-Frequency-and-Time-Forum / IEEE International Frequency Control Symposium (EFTF/IFCS)", 09/07/2017 - 13/07/2017, Besancon, France. pp. 1-4.
https://doi.org/10.1109/FCS.2017.8088957.
Title: | Substrate texturing for homogeneous deposition of tilted c-axis AlN films for shear mode operation |
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Author/s: |
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Item Type: | Presentation at Congress or Conference (Article) |
Event Title: | Proceedings of the 2017 Joint Conference of the European-Frequency-and-Time-Forum / IEEE International Frequency Control Symposium (EFTF/IFCS) |
Event Dates: | 09/07/2017 - 13/07/2017 |
Event Location: | Besancon, France |
Title of Book: | 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS) |
Date: | 2017 |
Subjects: | |
Freetext Keywords: | BAW resonators; shear mode resonator; tilted grains AlN |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Ingeniería Electrónica |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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We propose two methods to improve the growth process of AlN films displaying the c-axis uniformly tilted, intended for the excitation of shear modes in acoustic resonators. The two methods aim at modifying the surface topography of the substrates in order to produce a family of parallel planes offering a suitable orientation for the subsequent growth of uniformly tilted AlN microcrystals. The first method is based on an ion milling process over rough substrates. Rough substrates, obtained by depositing a W layer on sputtered porous silicon oxide layers, are bombarded with a wide beam of Ar ions impinging on the sample surface at an angle of 65º. All treated surfaces lead to increased mean tilt angles of the subsequently grown AlN films, which in turn improves the coupling factor of the shear mode resonators. The second method consists in transferring the topography of a blazed diffraction grating to a photoresist layer spun over metal substrates. The photoresist pattern is then transferred to the substrates by a non- selective directional reactive ion etching process with SF6.
Item ID: | 54007 |
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DC Identifier: | https://oa.upm.es/54007/ |
OAI Identifier: | oai:oa.upm.es:54007 |
DOI: | 10.1109/FCS.2017.8088957 |
Official URL: | https://ieeexplore.ieee.org/document/8088957 |
Deposited by: | Memoria Investigacion |
Deposited on: | 04 Mar 2019 16:57 |
Last Modified: | 04 Mar 2019 16:57 |