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García-Linares Fontes, Pablo ORCID: https://orcid.org/0000-0003-2369-3017, Antolín Fernández, Elisa
ORCID: https://orcid.org/0000-0002-5220-2849 and Martí Vega, Antonio
ORCID: https://orcid.org/0000-0002-8841-7091
(2019).
Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells.
"Solar Energy Materials and Solar Cells", v. 194
;
pp. 54-61.
ISSN 0927-0248.
https://doi.org/10.1016/j.solmat.2019.01.027.
Title: | Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Solar Energy Materials and Solar Cells |
Date: | 1 June 2019 |
ISSN: | 0927-0248 |
Volume: | 194 |
Subjects: | |
Freetext Keywords: | Photovoltaics, electronics, multijunction solar cells, three-terminal, bipolar junction transistor |
Faculty: | Instituto de Energía Solar (IES) (UPM) |
Department: | Electrónica Física, Ingeniería Eléctrica y Física Aplicada |
UPM's Research Group: | Silicio y Nuevos Conceptos para Células Solares |
Creative Commons Licenses: | None |
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Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared with monolithically and series-connected tandem solar cells. In addition, the simplified n-p-n (or p-np) structure does not require the use of tunnel junctions. In this framework, four architectures are proposed and discussed in this paper: 1) one in which the top cell is based on silicon and the bottom cell is based on a heterojunction between silicon and III-V nanomaterials; 2) one in which the top cell is made of amorphous silicon and the bottom cell is made of an amorphous silicon-silicon heterojunction; 3) one based on the use of III-V semiconductors aimed at space applications; and 4) one in which the top cell is based on a perovskite material and the bottom cell is made of a perovskitesilicon heterostructure.
Item ID: | 54882 |
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DC Identifier: | https://oa.upm.es/54882/ |
OAI Identifier: | oai:oa.upm.es:54882 |
DOI: | 10.1016/j.solmat.2019.01.027 |
Official URL: | https://doi.org/10.1016/j.solmat.2019.01.027 |
Deposited by: | Prof. Antonio Martí Vega |
Deposited on: | 06 May 2019 13:23 |
Last Modified: | 28 Feb 2023 19:18 |