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Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers
Citation
Clement Lorenzo, Marta 
ORCID: https://orcid.org/0000-0003-4956-8206, Felmetsger, Valeriy, Mirea, Teona ORCID: https://orcid.org/0000-0003-2324-4895, Olivares Roza, Jimena ORCID: https://orcid.org/0000-0003-4396-4363 and Iborra Grau, Enrique ORCID: https://orcid.org/0000-0002-1385-1379
(2018).
Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers.
In: "IEEE International Ultrasonics Symposium (IUS 2018)", 22/10/2018 - 25/10/2018, Kobe, Japan. pp. 1-4.
https://doi.org/10.1109/ULTSYM.2018.8580177.
Description
| Title: | Effects of Post-Deposition Vacuum Annealing on the Piezoelectric Properties of AlScN Thin Films Sputtered on 200 Mm Production Wafers |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | IEEE International Ultrasonics Symposium (IUS 2018) |
| Event Dates: | 22/10/2018 - 25/10/2018 |
| Event Location: | Kobe, Japan |
| Title of Book: | IEEE International Ultrasonics Symposium (IUS 2018) |
| Título de Revista/Publicación: | IEEE International Ultrasonics Symposium (IUS 2018) |
| Date: | 2018 |
| ISSN: | 1051-0117 |
| Subjects: | |
| Freetext Keywords: | AIScN films; Sc-doped AIN; reactive magnetrón sputtering; 200 mm silicon substrates; variation ofSc content |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Ingeniería Electrónica |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
Sc-doped AlN polycrystalline films are attractive active layers for high frequency (GHz range) acoustic resonators owing to the significant rise in the material piezoelectric activity with the increasing Sc content. AlScN films are sputtered on 200 mm Si wafers using configurable cathode containing a variable number of embedded Sc pellets which allows controlling both the Sc content in the films and the composition homogeneity across the wafer. The method is implemented in an Endeavor-AT? cluster tool from OEM Group adapted for sputtering on 200 mm wafers. The piezoelectric activity of the as-deposited AlScN films appears to improve after a 15-minute post-deposition annealing at 600ºC, leading to a 20% increase in the electromechanical coupling factor.
More information
| Item ID: | 55073 |
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| DC Identifier: | https://oa.upm.es/55073/ |
| OAI Identifier: | oai:oa.upm.es:55073 |
| DOI: | 10.1109/ULTSYM.2018.8580177 |
| Official URL: | https://ieeexplore.ieee.org/document/8580177 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 27 May 2019 15:21 |
| Last Modified: | 27 May 2019 15:21 |
