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López Escalante, María Cruz and Sciana, B. and Dawidowski, W. and Bielak, K. and Gabás Pérez, María Mercedes (2018). Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques. "Applied Surface Science", v. 433 ; pp. 1-9. ISSN 0169-4332. https://doi.org/10.1016/j.apsusc.2017.10.032.
Title: | Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Applied Surface Science |
Date: | March 2018 |
ISSN: | 0169-4332 |
Volume: | 433 |
Subjects: | |
Freetext Keywords: | III–V semiconductors; Dilute nitrides; N-bonding configuration; N-related defects; (AP)-MOVPE; ARXPS |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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This work presents the results of X-ray photoelectron spectroscopy studies on the bonding N configuration in InGaAsN epilayers grown by atmospheric pressure metal organic vapour phase epitaxy. Growth temperature has been tuned in order to obtain both, relaxed and strained layers. The studies were concentrated on analysing the influence of the growth temperature, post growth thermal annealing process and surface quality on the formation of Ga-N and In-N bonds as well as N-related defects. The contamination of InGaAsN films by growth precursor residues and oxides has also been addressed. The growth temperature stands out as a decisive factor boosting In-N bonds ormation, while the thermal annealing seems to affect the N-related defects density in the layers.
Type | Code | Acronym | Leader | Title |
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Government of Spain | TEC2014-54260-C3-3-P | Unspecified | Unspecified | Unspecified |
Government of Spain | PCIN2015-0181-C02-01 | Unspecified | Unspecified | Unspecified |
Item ID: | 55075 |
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DC Identifier: | https://oa.upm.es/55075/ |
OAI Identifier: | oai:oa.upm.es:55075 |
DOI: | 10.1016/j.apsusc.2017.10.032 |
Official URL: | https://www.sciencedirect.com/science/article/pii/S0169433217329550?via%3Dihub |
Deposited by: | Memoria Investigacion |
Deposited on: | 29 May 2019 16:21 |
Last Modified: | 01 Apr 2020 22:30 |