Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell

Zehender, Marius Harry and García Vara, Iván and Svatek, Simon Aurel and Steiner, Myles A. and García Linares, Pablo and Warren, Emily and Tamboli, Adele and Martí Vega, Antonio and Antolín Fernández, Elisa (2019). Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell. In: "2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)", 16/06/2019 - 21/06/2019, Chicago, IL, USA. pp. 35-40. https://doi.org/10.1109/PVSC40753.2019.8980563.

Description

Title: Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
Author/s:
  • Zehender, Marius Harry
  • García Vara, Iván
  • Svatek, Simon Aurel
  • Steiner, Myles A.
  • García Linares, Pablo
  • Warren, Emily
  • Tamboli, Adele
  • Martí Vega, Antonio
  • Antolín Fernández, Elisa
Item Type: Presentation at Congress or Conference (Article)
Event Title: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Event Dates: 16/06/2019 - 21/06/2019
Event Location: Chicago, IL, USA
Title of Book: 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Date: 2019
Subjects:
Freetext Keywords: Double junction; multi terminal; independent current; photovoltaic cells; gallium indium phosphide; gallium arsenide
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

Funding Projects

TypeCodeAcronymLeaderTitle
Madrid Regional GovernmentS2018/EMT-4308MADRID-PV2-CMUnspecifiedMateriales, dispositivos y tecnologías para el desarrollo de la industria fotovoltaica
Universidad Politécnica de MadridUnspecifiedUnspecifiedUnspecifiedPrograma Propio para Ayudas para Fortalecer Planes de Investigación
Universidad Politécnica de MadridUnspecifiedUnspecifiedUnspecifiedPrograma Propio para Ayudas Predoctorales dela UPM
Government of SpainRYC-2014-15621UnspecifiedUnspecifiedUnspecified
Government of SpainRYC-2015-18539UnspecifiedUnspecifiedUnspecified

More information

Item ID: 64911
DC Identifier: https://oa.upm.es/64911/
OAI Identifier: oai:oa.upm.es:64911
DOI: 10.1109/PVSC40753.2019.8980563
Official URL: https://ieeexplore.ieee.org/document/8980563
Deposited by: Memoria Investigacion
Deposited on: 20 Apr 2021 14:21
Last Modified: 20 Apr 2021 14:21
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