Effect of capping rate on InAs/GaAs quantum dot solar cells

Stanojevic, Lazar and Gonzalo Martín, Alicia and Utrilla Lomas, Antonio David and Fernández de los Reyes, David and Braza Blanco, Verónica and González Robledo, David and Fuertes Marrón, David and Hierro Cano, Adrián and Ulloa Herrero, José María (2019). Effect of capping rate on InAs/GaAs quantum dot solar cells. In: "SPIE OPTO 2019", 02/02/2019 - 07/02/2019, San Francisco (EE.UU). pp. 1091312-1091319. https://doi.org/10.1117/12.2509484.

Description

Title: Effect of capping rate on InAs/GaAs quantum dot solar cells
Author/s:
  • Stanojevic, Lazar
  • Gonzalo Martín, Alicia
  • Utrilla Lomas, Antonio David
  • Fernández de los Reyes, David
  • Braza Blanco, Verónica
  • González Robledo, David
  • Fuertes Marrón, David
  • Hierro Cano, Adrián
  • Ulloa Herrero, José María
Item Type: Presentation at Congress or Conference (Article)
Event Title: SPIE OPTO 2019
Event Dates: 02/02/2019 - 07/02/2019
Event Location: San Francisco (EE.UU)
Title of Book: Proceedings of SPIE 10913, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII
Date: 2019
Subjects:
Freetext Keywords: quantum dots; wetting layer; quantum dot solar cell; capping rate; carrier trapping
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The unavoidable presence of the wetting layer (WL) in Stranski-Krastanov quantum dots (QD) has typically a negative impact on the performance of QD solar cells. In this work, a simple method to engineer the WL of InAs/GaAs QD solar cells is investigated. In particular, we show that covering the QDs at high GaAs capping rates reduces In-Ga intermixing and, therefore, In redistribution from the QDs to the WL. This results not only in larger QDs, but also in thinner WLs, with larger quantum confinement energies and reduced potential barriers for electrons and holes. Carrier trapping by the WLs and subsequent recombination is therefore reduced, resulting in larger photocurrent values of the QD solar cells under short circuit conditions.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainMAT2016-77491-C2-1-RUnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2013/MAE-2780MADRID-PVUnspecifiedMateriales, dispositivos y tecnología para el desarrollo de la Industria fotovoltaica

More information

Item ID: 64976
DC Identifier: https://oa.upm.es/64976/
OAI Identifier: oai:oa.upm.es:64976
DOI: 10.1117/12.2509484
Official URL: https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10913/1091312/Effect-of-capping-rate-on-InAs-GaAs-quantum-dot-solar/10.1117/12.2509484.short?SSO=1
Deposited by: Memoria Investigacion
Deposited on: 17 Apr 2021 07:25
Last Modified: 17 Apr 2021 07:25
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