Combined assessment of Al1-xScxN thin films by RBS, XRD, FTIR and BAW frequency response measurements

Clement Lorenzo, Marta and Felmetsger, Valeriy and Olivares Roza, Jimena and Mirea, Teona and Sangrador García, Jesús (2019). Combined assessment of Al1-xScxN thin films by RBS, XRD, FTIR and BAW frequency response measurements. In: "2019 IEEE International Ultrasonics Symposium (IUS)", 06/10/2019 - 09/10/2019, Glasgow, Scotland, UK. pp. 720-723. https://doi.org/10.1109/ULTSYM.2019.8926266.

Description

Title: Combined assessment of Al1-xScxN thin films by RBS, XRD, FTIR and BAW frequency response measurements
Author/s:
  • Clement Lorenzo, Marta
  • Felmetsger, Valeriy
  • Olivares Roza, Jimena
  • Mirea, Teona
  • Sangrador García, Jesús
Item Type: Presentation at Congress or Conference (Article)
Event Title: 2019 IEEE International Ultrasonics Symposium (IUS)
Event Dates: 06/10/2019 - 09/10/2019
Event Location: Glasgow, Scotland, UK
Title of Book: 2019 IEEE International Ultrasonics Symposium (IUS)
Date: 2019
Subjects:
Freetext Keywords: AlScN films; Sc-doped AlN; reactive magnetron sputtering; 200-mm silicon substrates; variation of Sc content
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Ingeniería Electrónica
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Al0.7Sc0.3N films were reactively sputtered from Al-Sc segmented targets by ac powered dual-cathode S-gun magnetron. Films with homogeneous Sc concentration within 30 +/- 0.5 at. % were grown at ambient temperature directly on 200-mm (100) silicon wafers and on 100-mm silicon substrates covered with SiO2/Mo-based acoustic reflectors terminated by highly (110) textured Mo electrodes. The piezoelectric assessment derived from the frequency response of bulk acoustic resonators yields values of the electromechanical coupling factor k(2) up to 12.8%. Infrared absorption and X-ray diffraction measurements reveal that tiny structural changes may lead to deviation in the value of k(2) across the wafer, which can be reduced by performing a post-processing heat treatment at around 600 degrees C.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainTEC2017-84817-C2-1-RUnspecifiedUnspecifiedSensores gravimétricos de gases basados en resonadores electroacústicos de película delgada de ALN para aplicaciones en temperaturas extremas

More information

Item ID: 65258
DC Identifier: https://oa.upm.es/65258/
OAI Identifier: oai:oa.upm.es:65258
DOI: 10.1109/ULTSYM.2019.8926266
Official URL: https://ieeexplore.ieee.org/document/8926266
Deposited by: Memoria Investigacion
Deposited on: 18 Apr 2021 08:14
Last Modified: 19 Apr 2021 12:52
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