Phototransistor behavior in CIGS solar cells and the effect of the back contact barrier

Vidal Lorbada, Ricardo and Walter, Thomas and Fuertes Marrón, David and Muecke, Dennis and Lavrenko, Tetiana and Salomon, Oliver and Schaeffler, Raymund (2020). Phototransistor behavior in CIGS solar cells and the effect of the back contact barrier. "Energies", v. 13 (n. 18); pp.. ISSN 1996-1073. https://doi.org/10.3390/en13184753.

Description

Title: Phototransistor behavior in CIGS solar cells and the effect of the back contact barrier
Author/s:
  • Vidal Lorbada, Ricardo
  • Walter, Thomas
  • Fuertes Marrón, David
  • Muecke, Dennis
  • Lavrenko, Tetiana
  • Salomon, Oliver
  • Schaeffler, Raymund
Item Type: Article
Título de Revista/Publicación: Energies
Date: September 2020
ISSN: 1996-1073
Volume: 13
Subjects:
Freetext Keywords: photovoltaics; thin-films; CIGS; back contact; barrier; phototransistor
Faculty: Instituto de Energía Solar (IES) (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
UPM's Research Group: Silicio y Nuevos Conceptos para Células Solares
Creative Commons Licenses: None

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Abstract

In this paper, the impact of the back contact barrier on the performance of Cu (In, Ga) Se2 solar cells is addressed. This effect is clearly visible at lower temperatures, but it also influences the fundamental parameters of a solar cell, such as open-circuit voltage, fill factor and the efficiency at normal operation conditions. A phototransistor model was proposed in previous works and could satisfactorily explain specific effects associated with the back contact barrier, such as the dependence of the saturated current in the forward bias on the illumination level. The effect of this contribution is also studied in this research in the context of metastable parameter drift, typical for Cu (In, Ga) Se2 thin-film solar cells, as a consequence of different bias or light soaking treatments under high-temperature conditions. The impact of the back contact barrier on Cu (In, Ga) Se2 thin-film solar cells is analyzed based on experimental measurements as well as numerical simulations with Technology Computer-Aided Design (TCAD). A barrier-lowering model for the molybdenum/Cu (In, Ga) Se2 Schottky interface was proposed to reach a better agreement between the simulations and the experimental results. Thus, in this work, the phototransistor behavior is discussed further in the context of metastabilities supported by numerical simulations.

More information

Item ID: 66022
DC Identifier: https://oa.upm.es/66022/
OAI Identifier: oai:oa.upm.es:66022
DOI: 10.3390/en13184753
Official URL: https://www.mdpi.com/1996-1073/13/18/4753
Deposited by: Dr. David Fuertes Marrón
Deposited on: 03 Feb 2021 06:46
Last Modified: 03 Feb 2021 06:46
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