Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers

Gabás Pérez, María Mercedes and Ochoa-Martínez, E. and Bielak, K. and Pucicki, D. and Lombardero Hernández, Iván and Barrutia Poncela, Laura and Fuertes-Marrón, D. and Ochoa, M. and García, I. and Yoon, S.F. and Loke, W.K. and Wicaksono, S. and Tan, K.H. and Johnson, A.D. and Davies, J.I. and Algora del Valle, Carlos (2020). Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers. "Semiconductor Science and Technology", v. 35 ; p. 115022. https://doi.org/10.1088/1361-6641/abb525.

Description

Title: Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers
Author/s:
  • Gabás Pérez, María Mercedes
  • Ochoa-Martínez, E.
  • Bielak, K.
  • Pucicki, D.
  • Lombardero Hernández, Iván
  • Barrutia Poncela, Laura
  • Fuertes-Marrón, D.
  • Ochoa, M.
  • García, I.
  • Yoon, S.F.
  • Loke, W.K.
  • Wicaksono, S.
  • Tan, K.H.
  • Johnson, A.D.
  • Davies, J.I.
  • Algora del Valle, Carlos
Item Type: Article
Título de Revista/Publicación: Semiconductor Science and Technology
Date: 6 October 2020
Volume: 35
Subjects:
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
Creative Commons Licenses: None

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Abstract

Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap around 1.1 eV, to study the effects that has doping on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by Molecular Beam Epitaxy and characterized using X-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double Band-Anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainPCIN-2015-181-C02-01UnspecifiedUnspecifiedUnspecified
Government of SpainPCIN-2015-181-C02-02UnspecifiedUnspecifiedUnspecified
Government of SpainTEC2017-83447-PUnspecifiedUnspecifiedUnspecified
Madrid Regional GovernmentS2018/EMT-4308UnspecifiedUnspecifiedUnspecified
Universidad Politécnica de MadridRP 150910B12UnspecifiedUnspecifiedUnspecified

More information

Item ID: 66439
DC Identifier: https://oa.upm.es/66439/
OAI Identifier: oai:oa.upm.es:66439
DOI: 10.1088/1361-6641/abb525
Official URL: https://iopscience.iop.org/article/10.1088/1361-6641/abb525
Deposited by: Dra. Mercedes Gabás
Deposited on: 16 Mar 2021 17:25
Last Modified: 22 Mar 2021 09:52
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