High-Efficiency High-Bandwidth Four-Quadrant Fully Digitally Controlled GaN-Based Tracking Power Supply System for Linear Power Amplifiers

Lazarevic, Vladan Z. and Zubitur, I. and Vasic, Miroslav and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Patchin, Gregory and Eltze, Jens and Cobos Márquez, José Antonio (2019). High-Efficiency High-Bandwidth Four-Quadrant Fully Digitally Controlled GaN-Based Tracking Power Supply System for Linear Power Amplifiers. "IEEE Journal of Emerging and Selected Topics in Power Electronics", v. 7 (n. 2); pp. 664-678. ISSN 2168-6777. https://doi.org/10.1109/JESTPE.2018.2884959.

Description

Title: High-Efficiency High-Bandwidth Four-Quadrant Fully Digitally Controlled GaN-Based Tracking Power Supply System for Linear Power Amplifiers
Author/s:
  • Lazarevic, Vladan Z.
  • Zubitur, I.
  • Vasic, Miroslav
  • Oliver Ramírez, Jesús Angel
  • Alou Cervera, Pedro
  • Patchin, Gregory
  • Eltze, Jens
  • Cobos Márquez, José Antonio
Item Type: Article
Título de Revista/Publicación: IEEE Journal of Emerging and Selected Topics in Power Electronics
Date: June 2019
ISSN: 2168-6777
Volume: 7
Subjects:
Freetext Keywords: Enhancement-mode gallium-nitride high-electron-mobility transistors(GaN E-HEMTs); field-programmable gate array (FPGA) digital control; power amplifiers; zero-voltage switching (ZVS)
Faculty: E.T.S.I. Industriales (UPM)
Department: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

The ever-rising demands for a high efficiency and high power density in the power electronics market are motivating an intensive research in the area of wide bandgap (WBG) devices, with enhancement-mode gallium-nitride (GaN) highelectron-mobility transistors as the main representatives. Compared to the conventional silicon devices with the same voltage rating and ON-state resistance, the parasitic capacitances of GaN transistors are smaller up to 10 times. Although their turn-off energy is very small, for the high switching speeds, zero-voltage switching is preferable to avoid the turn-on power losses, especially in the application where the devices operate at megahertz switching frequencies and where the blocking voltages are high. This is also very important from the thermal point of view, due to the poor junction to ambient thermal impedance of the packaging, in order to avoid high junction temperatures. Moreover, for a successful design of a power converter, the magnetic materials optimized for the high-frequency range are a must, with a manganese-zinc ferrites as the most promising solution. In this paper, an 8-W, 1-MHz switching frequency fully digitally controllable bipolar tracking power supply with a 100-kHz small-signal bandwidth, the tracking speeds up to 2 V/μs, and the maximum efficiency beyond 94% is shown, where a symbiosis of WBG devices and the newest generation high-frequency magnetic materials manifests the clear benefits.

Funding Projects

TypeCodeAcronymLeaderTitle
Government of SpainFPU-16/06981UnspecifiedUnspecifiedUnspecified

More information

Item ID: 66863
DC Identifier: https://oa.upm.es/66863/
OAI Identifier: oai:oa.upm.es:66863
DOI: 10.1109/JESTPE.2018.2884959
Official URL: https://ieeexplore.ieee.org/document/8558523
Deposited by: Memoria Investigacion
Deposited on: 27 Apr 2021 14:21
Last Modified: 27 Apr 2021 16:36
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