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Characterization of Gain-Switched Pulses from 1.55 µm VCSEL
Citation
Consoli Barone, Antonio and Esquivias Moscardo, Ignacio and López Hernández, Francisco and Mulet, J. and Balle, Salvador (2010). Characterization of Gain-Switched Pulses from 1.55 µm VCSEL. "Photonics Technology Letters, IEEE", v. 22 (n. 11); pp. 772-774. ISSN 1041-1135. https://doi.org/10.1109/LPT.2010.2045648.
Description
| Title: | Characterization of Gain-Switched Pulses from 1.55 µm VCSEL |
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| Author/s: |
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| Item Type: | Article |
| Título de Revista/Publicación: | Photonics Technology Letters, IEEE |
| Date: | January 2010 |
| ISSN: | 1041-1135 |
| Volume: | 22 |
| Subjects: | |
| Freetext Keywords: | Gain switching (GS), semiconductor lasers, short pulse generation, time-bandwidth product, vertical-cavity surfaceemitting lasers (VCSELs). |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Tecnología Fotónica [hasta 2014] |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
We report on short optical pulse generation by gain-switching (GS) a low-cost commercial vertical-cavity surface-emitting laser emitting at 1.55 μm. The dependence of pulse characteristics on GS parameters is investigated and analyzed. Pulses with duration of 55 ps and time-bandwidth product between 0.91 and 2.2 are obtained at repetition rates between 1 and 3 GHz.
More information
| Item ID: | 7009 |
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| DC Identifier: | https://oa.upm.es/7009/ |
| OAI Identifier: | oai:oa.upm.es:7009 |
| DOI: | 10.1109/LPT.2010.2045648 |
| Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5432987&tag=1 |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 30 May 2011 09:34 |
| Last Modified: | 20 Apr 2016 16:06 |
