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Antolín Fernández, Elisa ORCID: https://orcid.org/0000-0002-5220-2849, Martí Vega, Antonio
ORCID: https://orcid.org/0000-0002-8841-7091, Farmer, C.D., García-Linares Fontes, Pablo
ORCID: https://orcid.org/0000-0003-2369-3017, Hernández Martín, Estela, Sanchez, A.M., Ben, T., Molina Rubio, Sergio Ignacio, Stanley, Colin and Luque López, Antonio
ORCID: https://orcid.org/0000-0002-8357-6413
(2010).
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell.
"Journal of Applied Physics", v. 108
(n. 6);
ISSN 0021-8979.
https://doi.org/10.1063/1.3468520.
Title: | Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Journal of Applied Physics |
Date: | January 2010 |
ISSN: | 0021-8979 |
Volume: | 108 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Intermediate band solar cells (IBSCs) fabricated to date from In(Ga)As/GaAs quantum dot arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap energies. However, the production of sub-bandgap photocurrent relies often on the thermal and/or tunneling escape of carriers from the QDs, which is incompatible with preservation of the output voltage. In this work, we test the effectiveness of introducing a thick GaAs spacer in addition to an InAlGaAs strain relief layer (SRL) over the QDs to reduce carrier escape. From an analysis of the QE at different temperatures, it is concluded that escape via tunneling can be completely blocked under short-circuit conditions, and that carriers confined in QDs with an InAlGaAs SRL exhibit a thermal escape activation energy over 100 meV larger than in the case of InAs QDs capped only with GaAs.
Item ID: | 7327 |
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DC Identifier: | https://oa.upm.es/7327/ |
OAI Identifier: | oai:oa.upm.es:7327 |
DOI: | 10.1063/1.3468520 |
Official URL: | http://jap.aip.org/resource/1/japiau/v108/i6/p0645... |
Deposited by: | Memoria Investigacion |
Deposited on: | 07 Jun 2011 11:01 |
Last Modified: | 03 Nov 2014 13:34 |