Simulation of high brightness tapered lasers

Esquivias Moscardo, Ignacio ORCID: https://orcid.org/0000-0001-7298-8271, Odriozola Franco, Helena, Garcia Tijero, Jose Manuel ORCID: https://orcid.org/0000-0002-7414-8855, Borruel Navarro, Luis, Minguez, A.M., Michel, N., Calligaro, M., Lecomte, M., Parillaud, O. and Krakowski, M. (2010). Simulation of high brightness tapered lasers. In: "SPIE Photonics West 2010", 23/06/2010 - 28/06/2010, San Francisco, EEUU.

Description

Title: Simulation of high brightness tapered lasers
Author/s:
Item Type: Presentation at Congress or Conference (Article)
Event Title: SPIE Photonics West 2010
Event Dates: 23/06/2010 - 28/06/2010
Event Location: San Francisco, EEUU
Title of Book: Proceedings of SPIE Photonics West 2010
Date: 2010
Volume: 7616
Subjects:
Freetext Keywords: Semiconductor lasers, High brightness lasers, tapered lasers, modeling, simulation, thermal effects
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Tecnología Fotónica [hasta 2014]
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi- 3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed

More information

Item ID: 7494
DC Identifier: https://oa.upm.es/7494/
OAI Identifier: oai:oa.upm.es:7494
Deposited by: Memoria Investigacion
Deposited on: 17 Jun 2011 08:22
Last Modified: 20 Apr 2016 16:38
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