Temperature Dependence of the Exciton Gap in Monocrystalline CuGaS2

Levcenco, S., Doka, S., Tezlevan, V., Fuertes Marrón, David ORCID: https://orcid.org/0000-0002-9493-9902, Kulyuk, L., Schedel Niedrig, T., Lux Steiner, M. Ch. and Arushano, E. (2010). Temperature Dependence of the Exciton Gap in Monocrystalline CuGaS2. "Physica B: Physics of Condensed Matter", v. 405 (n. 117); pp. 3547-3550. ISSN 0167-2789. https://doi.org/10.1016/j.physb.2010.05.037.

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Title: Temperature Dependence of the Exciton Gap in Monocrystalline CuGaS2
Author/s:
Item Type: Article
Título de Revista/Publicación: Physica B: Physics of Condensed Matter
Date: September 2010
ISSN: 0167-2789
Volume: 405
Subjects:
Freetext Keywords: Chalcopyrite; Photoluminescence Spectroscopy
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Otro
Creative Commons Licenses: Recognition - No derivative works - Non commercial

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Abstract

Single crystals of CuGaS2 have been grown by chemical vapour transport. Their near-band gap photoluminescence properties were investigated in the temperature range of 10-300 K. The variation of the exciton gap energy with temperature was studied by means of a three-parameter thermodynamic model, the Einstein model and the Pässler model. Values of the band gap at T=0 K, of a dimensionless constant related to the electron-phonon coupling, and of an effective and a cut-off phonon energy have been estimated. It has also been found that the major contribution of phonons to the shift of Eg as a function of T in CuGaS2 is mainly from optical phonons.

More information

Item ID: 8082
DC Identifier: https://oa.upm.es/8082/
OAI Identifier: oai:oa.upm.es:8082
DOI: 10.1016/j.physb.2010.05.037
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Deposited by: Memoria Investigacion
Deposited on: 18 Aug 2011 09:55
Last Modified: 20 Apr 2016 16:59
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