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Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells
Citation
Espinet González, Pilar, García Vara, Iván 
ORCID: https://orcid.org/0000-0002-9895-2020, Rey-Stolle Prado, Ignacio ORCID: https://orcid.org/0000-0002-4919-5609, Algora del Valle, Carlos ORCID: https://orcid.org/0000-0003-1872-7243 and Baudrit, Mathieu
(2010).
Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells.
In: "6th International Conference on Concentrating Photovoltaic Systems, CPV-6", 07/04/2010 - 09/04/2010, Friburgo, Alemania. ISBN 9780735408272.
Description
| Title: | Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells |
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| Author/s: |
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| Item Type: | Presentation at Congress or Conference (Article) |
| Event Title: | 6th International Conference on Concentrating Photovoltaic Systems, CPV-6 |
| Event Dates: | 07/04/2010 - 09/04/2010 |
| Event Location: | Friburgo, Alemania |
| Title of Book: | Proceedings of the 6th International Conference on Concentrating Photovoltaic Systems, CPV-6 |
| Date: | 2010 |
| ISBN: | 9780735408272 |
| Subjects: | |
| Freetext Keywords: | Photovoltaics, Concentrator, Tunnel Junction, Multi-Junction, Simulations, Solar Cells |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
In this paper, we present an improved 3D distributed model that considers real operation regimes in a tunnel junction. This advanced method is able to accurately simulate the high concentrations at which the current in the solar cell surpasses the peak current of the tunnel junction. Simulations of dual-junction solar cells were carried out with different light profiles and including chromatic aberration to show the capabilities of the model. Such simulations show that, under some circumstances, the solar cell short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading towards the dark regions, which occurs through the anode region of the tunnel junction.
More information
| Item ID: | 8260 |
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| DC Identifier: | https://oa.upm.es/8260/ |
| OAI Identifier: | oai:oa.upm.es:8260 |
| Official URL: | http://www.cpv-6.org/cms/ |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 29 Jul 2011 14:30 |
| Last Modified: | 20 Apr 2016 17:07 |
