Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells

Espinet González, Pilar and García Vara, Iván and Rey-Stolle Prado, Ignacio and Algora del Valle, Carlos and Baudrit, Mathieu (2010). Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells. In: "6th International Conference on Concentrating Photovoltaic Systems, CPV-6", 07/04/2010 - 09/04/2010, Friburgo, Alemania. ISBN 9780735408272.

Description

Title: Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells
Author/s:
  • Espinet González, Pilar
  • García Vara, Iván
  • Rey-Stolle Prado, Ignacio
  • Algora del Valle, Carlos
  • Baudrit, Mathieu
Item Type: Presentation at Congress or Conference (Article)
Event Title: 6th International Conference on Concentrating Photovoltaic Systems, CPV-6
Event Dates: 07/04/2010 - 09/04/2010
Event Location: Friburgo, Alemania
Title of Book: Proceedings of the 6th International Conference on Concentrating Photovoltaic Systems, CPV-6
Date: 2010
ISBN: 9780735408272
Subjects:
Freetext Keywords: Photovoltaics, Concentrator, Tunnel Junction, Multi-Junction, Simulations, Solar Cells
Faculty: E.T.S.I. Telecomunicación (UPM)
Department: Electrónica Física
Creative Commons Licenses: Recognition - No derivative works - Non commercial

Full text

[thumbnail of INVE_MEM_2010_82721.pdf]
Preview
PDF - Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (609kB) | Preview

Abstract

In this paper, we present an improved 3D distributed model that considers real operation regimes in a tunnel junction. This advanced method is able to accurately simulate the high concentrations at which the current in the solar cell surpasses the peak current of the tunnel junction. Simulations of dual-junction solar cells were carried out with different light profiles and including chromatic aberration to show the capabilities of the model. Such simulations show that, under some circumstances, the solar cell short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading towards the dark regions, which occurs through the anode region of the tunnel junction.

More information

Item ID: 8260
DC Identifier: https://oa.upm.es/8260/
OAI Identifier: oai:oa.upm.es:8260
Official URL: http://www.cpv-6.org/cms/
Deposited by: Memoria Investigacion
Deposited on: 29 Jul 2011 14:30
Last Modified: 20 Apr 2016 17:07
  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM