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Luque López, Antonio and Martí Vega, Antonio (2010). On the Partial Filling of the Intermediate Band in IB Solar Cells. "IEEE Transactions on Electron Devices", v. 57 (n. 6); pp. 1201-1207. ISSN 0018-9383. https://doi.org/10.1109/TED.2010.2045681.
Title: | On the Partial Filling of the Intermediate Band in IB Solar Cells |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | IEEE Transactions on Electron Devices |
Date: | June 2010 |
ISSN: | 0018-9383 |
Volume: | 57 |
Subjects: | |
Freetext Keywords: | Intermediate band (IB), quantum dot (QD), solar cell. |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Based on a generalized model of the Shockley-Read-Hall (SRH) statistics published elsewhere, the effect of the partial filling of the intermediate band (IB) in IB solar cells and the ways of producing it are analyzed, as is its influence on the electron-hole pair generation by subband-gap photons. The differences between cells with the conduction band and the IB thermally coupled and uncoupled are stressed. This paper is oriented toward the explanation of the operation of quantum-dot solar cells, where the IB is formed from electron-confined states but can also be applicable to other IB systems.
Type | Code | Acronym | Leader | Title |
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FP7 | 211640 | IBPOWER | Unspecified | Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost |
Item ID: | 8331 |
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DC Identifier: | https://oa.upm.es/8331/ |
OAI Identifier: | oai:oa.upm.es:8331 |
DOI: | 10.1109/TED.2010.2045681 |
Official URL: | http://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=5466557&arnumber=5447671&tag=1 |
Deposited by: | Memoria Investigacion |
Deposited on: | 20 Jul 2011 17:54 |
Last Modified: | 31 Oct 2014 10:15 |