Full text
Preview |
PDF
- Requires a PDF viewer, such as GSview, Xpdf or Adobe Acrobat Reader
Download (1MB) | Preview |
Ionization energy levels in C-doped InxGa1-xN alloys
Citation
Tablero Crespo, César 
ORCID: https://orcid.org/0000-0001-9721-1549
(2010).
Ionization energy levels in C-doped InxGa1-xN alloys.
"Applied Physics Letters", v. 97
(n. 192102);
pp. 1-3.
ISSN 0003-6951.
https://doi.org/10.1063/1.3515854.
Description
| Title: | Ionization energy levels in C-doped InxGa1-xN alloys |
|---|---|
| Author/s: |
|
| Item Type: | Article |
| Título de Revista/Publicación: | Applied Physics Letters |
| Date: | November 2010 |
| ISSN: | 0003-6951 |
| Volume: | 97 |
| Subjects: | |
| Faculty: | E.T.S.I. Telecomunicación (UPM) |
| Department: | Electrónica Física |
| Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
Abstract
The InxGa1−xN alloys present levels as a result of the intentional (doped) or unintentional (contamination) introduction of C atoms into the host semiconductor. The III-V nitride semiconductors and their alloys usually crystallize in the wurtzite structure although the zinc blende structure has also been grown. We obtained the InxGa1−xN:C ionization energies from first-principles calculations of the two ordered wurtzite and zinc blende structures using different exchange and correlation terms. In accordance with the experimental results, the ionization levels could give rise, on some occasions, to a metallic impurity band.
Funding Projects
Type
Code
Acronym
Leader
Title
FP7
211640
IBPOWER
Unspecified
Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost
More information
| Item ID: | 8348 |
|---|---|
| DC Identifier: | https://oa.upm.es/8348/ |
| OAI Identifier: | oai:oa.upm.es:8348 |
| DOI: | 10.1063/1.3515854 |
| Official URL: | http://apl.aip.org/resource/1/applab/v97/i19/p1921... |
| Deposited by: | Memoria Investigacion |
| Deposited on: | 19 Jul 2011 12:30 |
| Last Modified: | 03 Nov 2014 12:40 |
