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Tablero Crespo, César (2010). Electronic and optical properties of the group IV doped copper gallium chalcopyrites. "Thin Solid Films", v. 519 (n. 4); pp. 1435-1440. ISSN 0040-6090. https://doi.org/10.1016/j.tsf.2010.09.039.
Title: | Electronic and optical properties of the group IV doped copper gallium chalcopyrites |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Thin Solid Films |
Date: | December 2010 |
ISSN: | 0040-6090 |
Volume: | 519 |
Subjects: | |
Freetext Keywords: | Electronic structure; Chalcopyrite; Impurities; Optical properties |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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Ternary chalcopyrite semiconductors are well known as promising materials for photovoltaic applications. The substitution of group IV atoms in sulfur and selenium copper gallium chalcopyrites GaCuX2, with X = S and Se, could have important implications either for photovoltaic or spintronic applications. To better understand these effects, we have made first-principles calculations on the doped chalcopyrites with group IV atoms, with different concentrations and geometries. Many of these materials have an intermediate band that modifies the optical properties of the host semiconductor. The sub-gap absorptions have also been determined using the absorption coefficients.
Type | Code | Acronym | Leader | Title |
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FP7 | 211640 | IBPOWER | Unspecified | Intermediate Band Materials and Solar Cells for Photovoltaics with High Efficiency and Reduced Cost |
Item ID: | 8349 |
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DC Identifier: | https://oa.upm.es/8349/ |
OAI Identifier: | oai:oa.upm.es:8349 |
DOI: | 10.1016/j.tsf.2010.09.039 |
Official URL: | http://www.sciencedirect.com |
Deposited by: | Memoria Investigacion |
Deposited on: | 19 Jul 2011 11:38 |
Last Modified: | 07 Nov 2014 11:05 |