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Hofstetter, Jasmin and Lelievre, Jean Francoise and Cañizo Nadal, Carlos del and Luque López, Antonio (2010). Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication. "Solid State Phenomena", v. 156-15 ; pp. 387-393. ISSN 1012-0394. https://doi.org/10.4028/www.scientific.net/SSP.156-158.387.
Title: | Study of internal versus external gettering of iron during slow cooling processes for silicon solar cell fabrication |
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Author/s: |
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Item Type: | Article |
Título de Revista/Publicación: | Solid State Phenomena |
Date: | 2010 |
ISSN: | 1012-0394 |
Volume: | 156-15 |
Subjects: | |
Faculty: | E.T.S.I. Telecomunicación (UPM) |
Department: | Electrónica Física |
Creative Commons Licenses: | Recognition - No derivative works - Non commercial |
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The e�ect of slow cooling after di�erent high temperature treatments on the in- terstitial iron concentration and on the electron lifetime of p-type mc-Si wafers has been in- vestigated. The respective impacts of internal relaxation gettering and external segregation gettering of metal impurities during an extended phosphorous di�usion gettering are studied. It is shown that the enhanced reduction of interstitial Fe during extended P-gettering is due to an enhanced segregation gettering while faster impurities like Cu and Ni are possibly reduced due to an internal gettering e�ect.
Item ID: | 8422 |
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DC Identifier: | https://oa.upm.es/8422/ |
OAI Identifier: | oai:oa.upm.es:8422 |
DOI: | 10.4028/www.scientific.net/SSP.156-158.387 |
Official URL: | http://www.scientific.net/SSP.156-158.387 |
Deposited by: | Memoria Investigacion |
Deposited on: | 24 Aug 2011 08:53 |
Last Modified: | 20 Apr 2016 17:13 |