Export: Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy
Ulloa Herrero, José María and Anantahanasarn, S. and Van Veldhoven, P.J and Koenraad, P.M. and Nötzel, R. (2008). Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy. "Applied Physics Letters", v. 92 (n. 8); pp.. ISSN 0003-6951. https://doi.org/10.1063/1.2884692.
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