Export: Physical model for GaN HEMT design optimization in high frequency switching applications
Cucak, Dejana and Vasic, Miroslav and García, Oscar and Bouvier, Yann and Oliver Ramírez, Jesús Angel and Alou Cervera, Pedro and Cobos Márquez, José Antonio and Wang, Ashu and Martin Horcajo, Sara and Romero Rojo, Fátima and Calle Gómez, Fernando (2014). Physical model for GaN HEMT design optimization in high frequency switching applications. In: "44th European Solid State Device Research Conference (ESSDERC 2014)", 22/09/2014 - 26/09/2014, Venice, Italy. pp. 393-396. https://doi.org/10.1109/ESSDERC.2014.6948843.
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