Export: Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Bokov, P. Yu and Brazzini, Tommaso and Romero Rojo, Fátima and Calle Gómez, Fernando and Feneberg, Martin and Goldhahn, R. (2015). Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures. "Semiconductor Science and Technology", v. 30 (n. 8); pp. 1-6. ISSN 0268-1242. https://doi.org/10.1088/0268-1242/30/8/085014.

Please select an output format:

  • Logo InvestigaM (UPM)
  • Logo GEOUP4
  • Logo Open Access
  • Open Access
  • Logo Sherpa/Romeo
    Check whether the anglo-saxon journal in which you have published an article allows you to also publish it under open access.
  • Logo Dulcinea
    Check whether the spanish journal in which you have published an article allows you to also publish it under open access.
  • Logo de Recolecta
  • Logo del Observatorio I+D+i UPM
  • Logo de OpenCourseWare UPM