@inproceedings{upm11718,
         address = {EEUU},
       booktitle = {Proceedings of 37th IEEE PV Specialist Conference},
       publisher = {IEEE},
           pages = {784--789},
            year = {2011},
           title = {Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells},
             url = {http://ieeexplore.ieee.org/xpls/abs\%5fall.jsp?arnumber=6186071&tag=1},
            isbn = {978-1-4244-9966-3},
          author = {Garcia Tabares Valdivieso, Elisa and Garc{\'i}a Vara, Iv{\'a}n and Mart{\'i}n Mart{\'i}n, Diego and Rey-Stolle Prado, Ignacio},
        abstract = {Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.}
}