title: Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
creator: Garcia Tabares Valdivieso, Elisa
creator: García Vara, Iván
creator: Martín Martín, Diego
creator: Rey-Stolle Prado, Ignacio
subject: Telecommunications
description: Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.
publisher: E.T.S.I. Telecomunicación (UPM)
rights: https://creativecommons.org/licenses/by-nc-nd/3.0/es/
date: 2011
type: info:eu-repo/semantics/conferenceObject
type: Presentation at Congress or Conference
source: Proceedings of 37th IEEE PV Specialist Conference | 37th IEEE PV Specialist Conference | 19/06/2011 - 24/06/2011 | Seattle, EEUU
type: PeerReviewed
format: application/pdf
language: spa
relation: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6186071&tag=1
rights: info:eu-repo/semantics/openAccess
identifier: https://oa.upm.es/11718/