%0 Conference Paper
%A Garcia Tabares Valdivieso, Elisa
%A García Vara, Iván
%A Martín Martín, Diego
%A Rey-Stolle Prado, Ignacio
%B 37th IEEE PV Specialist Conference
%C Seattle, EEUU
%D 2011
%F upm:11718
%I IEEE
%P 784-789
%T Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
%U https://oa.upm.es/11718/
%X Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.