TY  - CONF
SP  - 784
AV  - public
A1  - Garcia Tabares Valdivieso, Elisa
A1  - García Vara, Iván
A1  - Martín Martín, Diego
A1  - Rey-Stolle Prado, Ignacio
SN  - 978-1-4244-9966-3
Y1  - 2011///
UR  - http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6186071&tag=1
EP  - 789
CY  - EEUU
T2  - 37th IEEE PV Specialist Conference
PB  - IEEE
ID  - upm11718
N2  - Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.
TI  - Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
M2  - Seattle, EEUU
ER  -