%I IEEE
%P 784-789
%L upm11718
%A Elisa Garcia Tabares Valdivieso
%A Iván García Vara
%A Diego Martín Martín
%A Ignacio Rey-Stolle Prado
%B Proceedings of 37th IEEE PV Specialist Conference
%D 2011
%T Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
%C EEUU
%X Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.