eprintid: 11718
rev_number: 9
eprint_status: archive
userid: 1903
dir: disk0/00/01/17/18
datestamp: 2012-10-09 09:27:34
lastmod: 2016-04-20 19:43:03
status_changed: 2012-10-09 09:27:34
type: conference_item
metadata_visibility: show
item_issues_count: 0
creators_name: Garcia Tabares Valdivieso, Elisa
creators_name: García Vara, Iván
creators_name: Martín Martín, Diego
creators_name: Rey-Stolle Prado, Ignacio
title: Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells
ispublished: pub
subjects: telecomunicaciones
abstract: Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.
date: 2011
date_type: published
publisher: IEEE
official_url: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6186071&tag=1
full_text_status: public
pres_type: paper
place_of_pub: EEUU
pagerange: 784-789
event_title: 37th IEEE PV Specialist Conference
event_location: Seattle, EEUU
event_dates: 19/06/2011 - 24/06/2011
event_type: conference
institution: Telecomunicacion
department: Electronica2
refereed: TRUE
isbn: 978-1-4244-9966-3
book_title: Proceedings of 37th IEEE PV Specialist Conference
rights: by-nc-nd
citation:   Garcia Tabares Valdivieso, Elisa and García Vara, Iván and Martín Martín, Diego and Rey-Stolle Prado, Ignacio  (2011).  Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells.  In: "37th IEEE PV Specialist Conference", 19/06/2011 - 24/06/2011, Seattle, EEUU. ISBN 978-1-4244-9966-3. pp. 784-789.    
document_url: https://oa.upm.es/11718/1/INVE_MEM_2011_97543.pdf