@article{upm11870,
            year = {2011},
           pages = {215--218},
       publisher = {Elsevier},
         journal = {Journal of Crystal Growth},
           month = {May},
          number = {1},
           title = {Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 um with low optical degradation},
          volume = {323},
             doi = {10.1016/j.jcrysgro.2010.12.045},
          author = {Milla Rodrigo, M. J. and Fern{\'a}ndez Gonz{\'a}lez, {\'A}lvaro de Guzm{\'a}n and Gargallo Caballero, Raquel and Ulloa Herrero, Jos{\'e} Mar{\'i}a and Hierro Cano, Adri{\'a}n},
             url = {https://oa.upm.es/11870/},
            issn = {0022-0248},
        abstract = {Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p-i-n structures emitting up to 1.55 {\ensuremath{\mu}}m is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4\%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 {\ensuremath{\mu}}m. The optimization studies of these structures for emission at 1.55 {\ensuremath{\mu}}m are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50\% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 {\ensuremath{\mu}}m and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 {\ensuremath{\mu}}m.}
}