eprintid: 11870
rev_number: 26
eprint_status: archive
userid: 1903
dir: disk0/00/01/18/70
datestamp: 2012-09-27 08:49:28
lastmod: 2023-03-27 14:57:00
status_changed: 2023-03-27 14:57:00
type: article
metadata_visibility: show
item_issues_count: 0
creators_name: Milla Rodrigo, M. J.
creators_name: Fernández González, Álvaro de Guzmán
creators_name: Gargallo Caballero, Raquel
creators_name: Ulloa Herrero, José María
creators_name: Hierro Cano, Adrián
title: Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation
ispublished: pub
subjects: fisica
abstract: Low optical degradation in GaInAsN(Sb)/GaAs quantum dots (QDs) p–i–n structures emitting up to 1.55 μm is presented in this paper. We obtain emission at different energies by means of varying N content from 1 to 4%. The samples show a low photoluminescence (PL) intensity degradation of only 1 order of magnitude when they are compared with pure InGaAs QD structures, even for an emission wavelength as large as 1.55 μm. The optimization studies of these structures for emission at 1.55 μm are reported in this work. High surface density and homogeneity in the QD layers are achieved for 50% In content by rapid decrease in the growth temperature after the formation of the nanostructures. Besides, the effect of N and Sb incorporation in the redshift and PL intensity of the samples is studied by post-growth rapid thermal annealing treatments. As a general conclusion, we observe that the addition of Sb to QD with low N mole fraction is more efficient to reach 1.55 μm and high PL intensity than using high N incorporation in the QD. Also, the growth temperature is determined to be an important parameter to obtain good emission characteristics. Finally, we report room temperature PL emission of InGaAsN(Sb)/GaAs at 1.4 μm.
date: 2011-05
date_type: published
publisher: Elsevier
id_number: 10.1016/j.jcrysgro.2010.12.045
full_text_status: public
publication: Journal of Crystal Growth
volume: 323
number: 1
pagerange: 215-218
institution: E_Telecomunicacion
department: Ingenieria_Electronica
refereed: TRUE
issn: 0022-0248
rights: by-nc-nd
comprojects_type: CM
comprojects_code: S2009/ESP-1503
citation:    Milla Rodrigo, M. J., Fernández González, Álvaro de Guzmán, Gargallo Caballero, Raquel, Ulloa Herrero, José María and Hierro Cano, Adrián  (2011).  Optimization of InGaAsN(Sb)/GaAs quantum dots for optical emission at 1.55 µm with low optical degradation.   "Journal of Crystal Growth", v. 323  (n. 1);   pp. 215-218.  ISSN 0022-0248.   https://doi.org/10.1016/j.jcrysgro.2010.12.045 <https://doi.org/10.1016/j.jcrysgro.2010.12.045>. 
document_url: https://oa.upm.es/11870/2/INVE_MEM_2011_99056.pdf